Millimeter-wave and terahertz transmission loss of CMOS process-based substrate integrated waveguide

The transmission loss of the substrate integrated waveguide (SIW) with CMOS process is investigated in this paper. It is found from the simulation and experimental results that the loss is dominated by the conductor loss other than the dielectric. The period structure of the metallic layers which is required by the CMOS process rules and the random roughness cause extra loss compared with normal conductor plane. An equivalent conductivity value of 8.6e7 S/m is concluded with the simulation and experimental results, which can be used for the design of SIW and SIW components with CMOS process.