• DocumentCode
    287009
  • Title

    Reflectance and transmittance in heteroface GaAs solar cells

  • Author

    Bustani, A.Al. ; Feteha, M.Y.

  • Author_Institution
    Environ. Electron. Res. Group, Univ. of Central Lancashire, UK
  • fYear
    1993
  • fDate
    17-19 Nov 1993
  • Firstpage
    55
  • Lastpage
    60
  • Abstract
    The results of reflection and transmission calculations for heteroface AlGaAs-GaAs solar cells are presented. Effects of single and double layer AR coating are included in a matrix formulation analysis. Due to reflection losses the only transmitted light is about 66.415% of the AMO spectrum. By applying a double antireflection coating with optimum thicknesses, this transmission can be increased to around 87% for Al0.8Ga0.2As taking into account the grid shadow and window layer effect on the optical properties (reflection and transmission)
  • Keywords
    III-V semiconductors; aluminium compounds; antireflection coatings; gallium arsenide; light reflection; light transmission; p-n heterojunctions; semiconductor device models; Al0.8Ga0.2As; AlGaAs-GaAs; antireflection coating; grid shadow; losses; matrix formulation analysis; p-n heterojunctions; reflectance; reflection; solar cells; transmission; transmittance; window layer effect;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Renewable Energy - Clean Power 2001, 1993., International Conference on
  • Conference_Location
    London
  • Print_ISBN
    0-85296-605-9
  • Type

    conf

  • Filename
    264122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=287009