Title :
A Gb MOS logic circuit with buried channel MOSFETs
Author :
Nishiuchi, K. ; Shibayama, H. ; Nakamura, T. ; Hisatsugu, T. ; Ishikawa, Hiroshi ; Fukukawa, Y.
Author_Institution :
Fujitsu Labs., Ltd., Kawasaki, Japan
Abstract :
A buried-channel MOS frequency divider using 1μm design and fabricated by dry processes with electron-beam made masks will be reported. Gb frequency division and sub 100ps switching delay have been obtained.
Keywords :
Circuit optimization; Delay; Frequency conversion; Gallium arsenide; Laboratories; Logic circuits; Logic devices; MOSFETs; Ring oscillators; Switching circuits;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156097
