Title :
An ESD-Protected DC-to-6GHz 9.7mW LNA in 90nm Digital CMOS
Author :
Borremans, J. ; Wambacq, P. ; Linten, D.
Author_Institution :
IMEC, Leuven
Abstract :
A 50times35mum2 DC-to-6GHz LNA is designed in a digital 90nm CMOS process. It draws 8.1 mA from a 1.2V supply and achieves a minimum NF of 2.8dB and 17dB of gain. In the 6GHz bandwidth, S11 is below -10dB and the IIP3 varies between -16 and -7dBm. ESD protection of 3.2kV HBM is implemented, as well as an optional second stage with gain selection adding up to 4dB of gain
Keywords :
CMOS digital integrated circuits; electrostatic discharge; low noise amplifiers; microwave amplifiers; 1.2 V; 17 dB; 2.8 dB; 3.2 kV; 4 dB; 6 GHz; 8.1 mA; 9.7 mW; 90 nm; ESD protection; HBM; LNA; digital CMOS; Bandwidth; Capacitors; Degradation; Diodes; Feedback; Impedance matching; Linearity; Noise measurement; Radio frequency; Silicon;
Conference_Titel :
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0853-9
Electronic_ISBN :
0193-6530
DOI :
10.1109/ISSCC.2007.373474
