Title :
99% External quantum efficiency from a GaAs heterostructure at 100 K
Author :
Imangholi, B. ; Wang, C. ; Hasselbeck, M.P. ; Sheik-Bahae, M. ; Epstein, R. ; Kurtz, S.
Author_Institution :
Dept. of Phys. & Astron., Univ. of New Mexico, Albuquerque, NM
Abstract :
Record external quantum efficiency (99%) is obtained for a GaAs/InGaP heterostructure bonded to a dome lens at 100 K. This was measured using a differential luminescence thermometry technique with temperature resolution ~ 30 muK.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor heterojunctions; GaAs heterostructure; GaAs-InGaP; differential luminescence thermometry; efficiency 99 percent; external quantum efficiency; temperature 100 K; Cooling; Gallium arsenide; Laser excitation; Lenses; Luminescence; Optical surface waves; Radiative recombination; Surface emitting lasers; Temperature; Wavelength measurement; 300.6280; 300.6470;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628170
