DocumentCode :
2870348
Title :
MOS color imaging device
Author :
Aoki, Masaki ; Ohba ; Takemoto, I. ; Nagahara, Shizue ; Sasano, A. ; Kubo, Momoji
Author_Institution :
Hitachi Central Research Laboratory, Tokyo, Japan
Volume :
XXIII
fYear :
1980
fDate :
13-15 Feb. 1980
Firstpage :
26
Lastpage :
27
Abstract :
This report will cover a 485 × 384 element MOS solid-state imaging device with a monolithic color filter array for a single-chip 2/3" image color camera. SNR of over 46dB for fixed pattern noise and 40dB, for random noise has been obtained at scene illumination of 1O01ux, F2.8, with a noise suppression circuit.
Keywords :
Cameras; Capacitance; Circuit noise; Color; Colored noise; FETs; Filters; Noise figure; Shift registers; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1980.1156112
Filename :
1156112
Link To Document :
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