DocumentCode
2870423
Title
Two 10Gb/s/pin Low-Power Interconnect Methods for 3D ICs
Author
Gu, Qun ; Xu, Zhiwei ; Ko, Jenwei ; Chang, Mau-Chung Frank
Author_Institution
California Univ., Los Angeles, CA
fYear
2007
fDate
11-15 Feb. 2007
Firstpage
448
Lastpage
614
Abstract
Two RF techniques are combined with capacitive coupling interconnect to form ultra-wide-bandwidth impulse interconnect and RF interconnect in 3D IC technology. They achieve 10Gb/s/pin and 11Gb/s/pin transmission with 2.7mW/pin and 4.35mW/pin power consumption, respectively, using the MIT Lincoln Lab 3D 0.18mum CMOS, an 8times improvement over previous work
Keywords
CMOS integrated circuits; integrated circuit design; integrated circuit interconnections; low-power electronics; 0.18 micron; 10 Gbit/s; 11 Gbit/s; 2.7 mW; 3D integrated circuits; 4.35 mW; CMOS integrated circuit; RF interconnect; RF techniques; capacitive coupling interconnect; low-power interconnect methods; ultra-wide-bandwidth impulse interconnect; Amplitude shift keying; Bit error rate; Capacitors; Integrated circuit interconnections; Integrated circuit technology; Optical signal processing; RF signals; Radio frequency; Radiofrequency interference; Transceivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
1-4244-0853-9
Electronic_ISBN
0193-6530
Type
conf
DOI
10.1109/ISSCC.2007.373487
Filename
4242458
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