Title :
Quest to semiconductor intraband terahertz lasers : From p-Ge intersubband and CR lasers to cascade and Si donor Raman lasers
Author :
Andronov, Alexander A.
Author_Institution :
Inst. for Phys. of Microstruct., Russian Acad. of Sci., Nizhni Novgorod
Abstract :
Survey of research directed to create semiconductor intraband THz lasers based on bulk Ge and Si samples and on quantum well systems is given. Some recent proposals and observations in the field are also covered.
Keywords :
Raman lasers; elemental semiconductors; germanium; infrared sources; quantum well lasers; silicon; submillimetre wave lasers; CR Lasers; Ge; Si; Si donor Raman lasers; cascade lasers; intraband terahertz lasers; p-Ge intersubband lasers; semiconductor lasers; Chromium; Laser modes; Laser transitions; Optical pumping; Optical scattering; Optical superlattices; Pump lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; (140 0140) Laser and Laser Optics; (140, 3270) Infrared and far-infrared Lasers;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628184
