Title :
High power quantum cascade lasers by MOVPE
Author :
Bour, David ; Diehl, L. ; Troccoli, Mariano ; Corzine, Scott ; Zhu, Junan ; Hofler, G. ; Assayag, O. ; Lee, Bang-Wook ; Loncar, Marko ; Smith, Dante J. ; Capasso, Federico
Author_Institution :
Agilent Labs., Palo Alto, CA
Abstract :
Lattice-matched and strain-compensated InGaAs-AlInAs quantum cascade lasers have been grown by MOVPE, which operate continuously at room temperature and have threshold less than 2 kA/cm2.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; laser beams; quantum cascade lasers; vapour phase epitaxial growth; InGaAs-AlInAs; MOVPE; high power lasers; lattice matched laser structures; quantum cascade lasers; strain compensation; temperature 293 K to 298 K; Contacts; Epitaxial growth; Epitaxial layers; Indium phosphide; Laboratories; Molecular beam epitaxial growth; Optical materials; Quantum cascade lasers; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628188
