Title :
MOCVD-grown room temperature continuous-wave quantum cascade lasers without lateral regrowth
Author :
Liu, Zhijun ; Wasserman, Daniel ; Howard, Scott S. ; Gmachl, Claire F. ; Wang, Xiaojun ; Tanbun-Ek, Tawee ; Cheng, Liwei ; Choa, Fow-Sen
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ
Abstract :
Room temperature, continuous-wave operation of lambda~8.2 mum quantum cascade lasers grown by MOCVD is reported. The lasers have been processed as double-channel ridge waveguides without the need for buried heterostructures.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gold; indium compounds; quantum cascade lasers; semiconductor lasers; waveguide lasers; Au-In0.52Al0.48As-In0.53Ga0.47As; MOCVD; buried heterostructures; continuous-wave operation; double-channel ridge waveguides; quantum cascade lasers; temperature 293 K to 298 K; Chemical lasers; Gas lasers; Gold; Molecular beam epitaxial growth; Optical design; Optical waveguides; Quantum cascade lasers; Semiconductor lasers; Temperature; Waveguide lasers; (140.3070) Infrared and far-infrared lasers; (140.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628189
