DocumentCode :
2870556
Title :
A 50GS/s Distributed T/H Amplifier in 0.18μm SiGe BiCMOS
Author :
Lee, Jaesik ; Baeyens, Yves ; Weiner, Joseph ; Chen, Young-Kai
Author_Institution :
Alcatel-Lucent, Murray Hill, NJ
fYear :
2007
fDate :
11-15 Feb. 2007
Firstpage :
466
Lastpage :
616
Abstract :
A 3-stage distributed T/H amplifier (DTHA) is presented for high-bit-rate optical receivers and millimeter-wave radios. Distributed topology enhances the bandwidth of the DTHA to >42GHz in track mode. The DTHA achieves 2-tone SFDR of 46dB with 15GHz input signal. The 1.47mm2 chip designed in a 0.18μm SiGe BiCMOS process dissipates 640mW.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; distributed amplifiers; sample and hold circuits; 0.18 micron; 15 GHz; 640 mW; BiCMOS process; SiGe; distributed T/H amplifier; distributed topology; high-bit-rate optical receivers; millimeter-wave radios; Bandwidth; BiCMOS integrated circuits; Clocks; Distributed amplifiers; Frequency; Germanium silicon alloys; Microstrip; Silicon germanium; Switches; Transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
1-4244-0852-0
Electronic_ISBN :
0193-6530
Type :
conf
DOI :
10.1109/ISSCC.2007.373496
Filename :
4242467
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2870556
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