DocumentCode
2870602
Title
A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput
Author
Lee, Kwang-Jin ; Cho, Beak-Hyung ; Cho, Woo-Yeong ; Kang, Sangbeom ; Choi, Byung-Gil ; Oh, Hyung-Rok ; Lee, Chang-Soo ; Kim, Hye-Jin ; Park, Joon-min ; Wang, Qi ; Park, Mu-Hui ; Ro, Yu-Hwan ; Choi, Joon-Yong ; Kim, Ki-Sung ; Kim, Young-Ran ; Shin, In-Cheo
Author_Institution
Samsung Electron., Hwasung
fYear
2007
fDate
11-15 Feb. 2007
Firstpage
472
Lastpage
616
Abstract
A 512Mb diode-switch PRAM is developed in a 90nm CMOS technology. A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are described. Through these schemes, the PRAM achieves read throughput of 266MB/S and maximum write throughput of 4.64MB/S with a 1.8V supply.
Keywords
CMOS memory circuits; phase change materials; random-access storage; semiconductor diodes; 1.8 V; 512 Mbit; 90 nm; CMOS technology; charge-pump system; diode-switch PRAM; read/write circuit techniques; Charge pumps; Circuits; Diodes; Leakage current; Material storage; Nonvolatile memory; Phase change random access memory; Switches; Throughput; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
1-4244-0853-9
Electronic_ISBN
0193-6530
Type
conf
DOI
10.1109/ISSCC.2007.373499
Filename
4242470
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