Title :
A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current
Author :
Hanzawa, Satoru ; Kitai, Naoki ; Osada, Kenichi ; Kotabe, Akira ; Matsui, Yuichi ; Matsuzaki, Nozomu ; Takaura, Norikatsu ; Moniwa, Masahiro ; Kawahara, Takayuki
Author_Institution :
Hitachi, Tokyo
Abstract :
An experimental 512kB embedded PCM uses a current-saving architecture in a 0.13μm 1.5V CMOS. The write scheme features a low-write-current resistive device and achieves 416kB/s write-throughput at 100muA cell current. A charge-transfer direct-sense scheme has a 16b parallel read access time of 9.9ns in an array drawing 280μA. A standby voltage scheme suppresses leakage current in the cell current path and increases the measured PCM cell resistance from 3 to 33MΩ.
Keywords :
CMOS memory circuits; embedded systems; leakage currents; phase change materials; 0.13 micron; 1.5 V; 100 μA; 16 bit; 280 μA; 3 to 33 Mohm; 416 kbit/s; 512 kbit; 9.9 ns; CMOS integrated circuits; cell write current; charge-transfer direct-sense scheme; current-saving architecture; embedded phase change memory; leakage current; low-write-current resistive device; Current measurement; Electrical resistance measurement; Leakage current; MOSFETs; Phase change materials; Phase change memory; Preamplifiers; Testing; Throughput; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0852-0
Electronic_ISBN :
0193-6530
DOI :
10.1109/ISSCC.2007.373500
