Title :
One Mb bubble memory with support electronics
Author_Institution :
Intel Magnetics, Inc., Santa Clara, CA, USA
Abstract :
A 1Mb bubble memory system, including the bubble device, made on garnet material, and five silicon support devices, made with bipolar, CMOS, VMOS, NMOS and HMOS processes, will be discussed.
Keywords :
Coils; Detectors; Error analysis; Iron; Low voltage; Magnetic films; Optical films; Read-write memory; Sputtering; Timing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156141
