DocumentCode
2870908
Title
A MOS Image Sensor with Microlenses Built by Sub-Wavelength Patterning
Author
Toshikiyo, Kimiaki ; Yogo, Takanori ; Ishii, Motonori ; Yamanaka, Kazuhiko ; Matsuno, Toshinobu ; Onozawa, Kazutoshi ; Yamaguchi, Takumi
Author_Institution
Matsushita Electr. Ind., Kyoto
fYear
2007
fDate
11-15 Feb. 2007
Firstpage
514
Lastpage
515
Abstract
A MOS image sensor has digital-microlenses implemented by sub-wavelength patterning of concentric SiO2 ring walls. The sensitivity at the periphery of the imager is 3000e-/1x-s. In comparison, the sensitivity at the periphery of a conventional imager is 1300e/1x-s. Thus, extremely uniform brightness throughout the reproduced image is demonstrated even with an angle of incidence > 45deg.
Keywords
MOS integrated circuits; image sensors; microlenses; silicon compounds; MOS image sensor; SiO2; digital-microlenses; ring walls; sub-wavelength patterning; Digital cameras; Image sensors; Lenses; Microoptics; Optical arrays; Optical refraction; Optical sensors; Pixel; Refractive index; Signal design;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
1-4244-0853-9
Electronic_ISBN
0193-6530
Type
conf
DOI
10.1109/ISSCC.2007.373520
Filename
4242491
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