DocumentCode :
2871040
Title :
An 18ns CMOS/SOS 4K static RAM
Author :
Isobe, M. ; Uchida, Yasuo ; Maeguchi, K. ; Mochizuki, Takashi ; Kimura, Mizue ; Hatano, Hiroshi ; Mizutani, Y. ; Tango, H.
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
Volume :
XXIV
fYear :
1981
fDate :
18-20 Feb. 1981
Firstpage :
12
Lastpage :
13
Abstract :
A 4K static RAM using 2μm MoSi2-gate CMOS/SOS technology, affording 18ns access time, 200mW operating power and 50μW standby power will be covered.
Keywords :
CMOS technology; Capacitance; Fabrication; Hysteresis; MOSFETs; Operational amplifiers; Random access memory; Read-write memory; Solid state circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1981.1156152
Filename :
1156152
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2871040
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