• DocumentCode
    2871046
  • Title

    HI-CMOSII 4K static RAM

  • Author

    Minato, O. ; Masuhara, T. ; Sasaki, T. ; Sakai, Yoshiki ; Yoshizaki, Kayoko

  • Author_Institution
    Hitachi Central Research Laboratory, Tokyo, Japan
  • Volume
    XXIV
  • fYear
    1981
  • fDate
    18-20 Feb. 1981
  • Firstpage
    14
  • Lastpage
    15
  • Abstract
    This paper will discuss an 18ns/150mW fully static 4096×1b RAM, using double poly HI-CMOSII technology with 2μm gate length.
  • Keywords
    Circuits; Decoding; Fabrication; MOS devices; Power dissipation; Random access memory; Read-write memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1981.1156153
  • Filename
    1156153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2871046