Title :
HI-CMOSII 4K static RAM
Author :
Minato, O. ; Masuhara, T. ; Sasaki, T. ; Sakai, Yoshiki ; Yoshizaki, Kayoko
Author_Institution :
Hitachi Central Research Laboratory, Tokyo, Japan
Abstract :
This paper will discuss an 18ns/150mW fully static 4096×1b RAM, using double poly HI-CMOSII technology with 2μm gate length.
Keywords :
Circuits; Decoding; Fabrication; MOS devices; Power dissipation; Random access memory; Read-write memory; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156153
