• DocumentCode
    2871196
  • Title

    A single 5V supply nonvolatile static RAM

  • Author

    Drori, J. ; Jewell-Larsen, S. ; Klein, R. ; Owen, W. ; Simko, R. ; Tchon, W. ; Darwish, M. ; Dill, H.

  • Author_Institution
    Xicor, Inc., Sunnyvale, CA, USA
  • Volume
    XXIV
  • fYear
    1981
  • fDate
    18-20 Feb. 1981
  • Firstpage
    148
  • Lastpage
    149
  • Abstract
    A completely TTL-compatible, single 5V supply, nonvolatile RAM utilizing a three-layer polysllicon process and a low-current floating-gate tunneling approach, will be described.
  • Keywords
    Circuits; Electrons; Latches; Nonvolatile memory; PROM; Random access memory; Read-write memory; Telecommunications; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1981.1156162
  • Filename
    1156162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2871196