DocumentCode :
2871196
Title :
A single 5V supply nonvolatile static RAM
Author :
Drori, J. ; Jewell-Larsen, S. ; Klein, R. ; Owen, W. ; Simko, R. ; Tchon, W. ; Darwish, M. ; Dill, H.
Author_Institution :
Xicor, Inc., Sunnyvale, CA, USA
Volume :
XXIV
fYear :
1981
fDate :
18-20 Feb. 1981
Firstpage :
148
Lastpage :
149
Abstract :
A completely TTL-compatible, single 5V supply, nonvolatile RAM utilizing a three-layer polysllicon process and a low-current floating-gate tunneling approach, will be described.
Keywords :
Circuits; Electrons; Latches; Nonvolatile memory; PROM; Random access memory; Read-write memory; Telecommunications; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1981.1156162
Filename :
1156162
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2871196
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