Title :
NMOS comparator for a bubble memory
Author :
McCreary, J. ; Hunt, J.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
An NMOS comparator designed for a bubble memory peripheral support chip will be reported. Circuit compares the difference between two successive differential input signals against a 2.5mV threshold voltage. A 40μV offset voltage with a 0.1μV/°C drift has been measured.
Keywords :
Capacitors; Circuits; Clamps; Logic; MOS devices; Nonvolatile memory; Switches; Temperature distribution; Threshold voltage; Timing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156164
