Title :
A 32K static RAM utilizing a three-transistor cell
Author :
Ching-Lin Jiang ; Plachno, R.
Author_Institution :
Mostek Corporation, Carrollton, TX, USA
Abstract :
This paper will discuss the use of a 3-transistor memory cell, with two cross-coupled transistors, an access transistor and a MOS capacitor, that affords static operation and low standby power operation.
Keywords :
Circuits; Clocks; Diodes; Leakage current; MOS capacitors; MOSFETs; Random access memory; Read-write memory; Timing; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156167
