Enhanced terahertz detection via ErAs:GaAs nanoisland superlattices

Author

Hara, John F O ; Taylor, A.J. ; Averitt, R.D. ; Zide, J.M. ; Gossard, A.C.

Author_Institution

Center for Integrated Nanotechnol., Los Alamos Nat. Lab., Los Alamos, NM

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We demonstrate enhanced terahertz detection using photoconductive antennas fabricated on superlattices of self-assembled ErAs nanoislands and GaAs. Low-temperature GaAs and radiation-damaged silicon-on-sapphire based detectors are compared in terms of bandwidth, signal-to-noise ratio, and optical efficiency.

Keywords

erbium compounds; gallium arsenide; island structure; low-temperature techniques; nanostructured materials; photoconducting devices; photodetectors; sapphire; self-assembly; silicon-on-insulator; superlattices; terahertz wave detectors; ErAs; GaAs; Si-Al₂O₃; enhanced terahertz detection; low-temperature detector; nanoisland superlattices; photoconductive antenna; radiation-damaged silicon-on-sapphire based detector; self-assembled nanoislands; Gallium arsenide; High speed optical techniques; Lenses; Optical superlattices; Radiation detectors; Silicon radiation detectors; Spectroscopy; Substrates; System testing; Ultrafast optics; (230.3990) Microstructure devices; (320.7150) Ultrafast spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628238

Filename

4628238