Title :
Optical properties of InAs quantum dot structures transferred to Si with oxidation lift-off technology
Author :
Yakimov, Michael ; Kambhampati, R. ; Tokranov, Vadim ; van Eisden, J. ; Oktyabrsky, Serge
Author_Institution :
Coll. of Nanoscale Sci. & Eng., Univ. at Albany - SUNY, Albany, NY
Abstract :
Homoepitaxially grown InAs quantum dot structures were transferred to Si substrates using oxidation lift-off technology accompanied by direct hydrophilic bonding with Si. Electroluminescence with injection through the substrate and photoluminescence data are presented.
Keywords :
III-V semiconductors; electroluminescence; indium compounds; oxidation; photoluminescence; semiconductor quantum dots; InAs; Si; direct hydrophilic bonding; electroluminescence; homoepitaxial growth; oxidation lift-off technology; photoluminescence; quantum dot structures; Electroluminescence; Photoluminescence; Quantum dots; Silicon; Substrates; (160.6000) Semiconductors, including MQW; (250.3140) Integrated optoelectronic circuits;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628244
