DocumentCode
2871362
Title
Growth of p-type ZnO and its application to ZnO LEDs
Author
Park, Seong-Ju
Author_Institution
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
A UV ZnO light-emitting diode was realized by using a ZnO p-n homojunction. The ZnO LED showed clear rectification with a threshold voltage of 3.2 V and a UV light emission at 380 nm.
Keywords
light emitting diodes; p-n junctions; semiconductor growth; LED; ZnO; light emitting diode; p-n homojunction; semiconductor growth; voltage 3.2 V; wavelength 380 nm; Energy barrier; Gallium nitride; Light emitting diodes; Materials science and technology; Nitrogen; Photonic band gap; Solid state lighting; Temperature; Threshold voltage; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628245
Filename
4628245
Link To Document