Title :
Fabricating GaN-based LEDs with V-shape sapphire facet mirror by double transferred scheme
Author :
Lee, Y.J. ; Lu, T.C. ; Kuo, H.C. ; Wang, S.C. ; Hwang, J.M. ; Hsu, T.C. ; Hsieh, M.H. ; Jou, M.J.
Abstract :
GaN-based LEDs with V-shape sapphire facet reflectors were fabricated using a double transferred scheme. It is demonstrated the {1-102} R-plane V-shape facet reflector with high slope of 57deg has the superior efficiency for light extraction.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; wide band gap semiconductors; Al2O3; GaN; LED fabrication; V-shape sapphire facet mirror; double transferred scheme; light extraction; Current measurement; Gallium nitride; LED lamps; Light emitting diodes; Mirrors; Optical device fabrication; Power generation; Refractive index; Substrates; Wet etching; (230.3670);
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628247
