Title :
A 2GHz 0.25μm SiGe BiCMOS Oscillator with Flip-Chip Mounted BAW Resonator
Author :
Razafimandimby, S. ; Cathelin, A. ; Lajoinie, J. ; Kaiser, Alexander ; Belot, D.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
An RF oscillator consisting of a BAW resonator on top of a SiGe BiCMOS IC is presented. The circuit achieves a phase noise of -124dBc/Hz at 100kHz carrier offset, -160dBc/Hz floor and supply pushing of 65ppm/V while consuming 12mW in an IC footprint of 0.043mm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bulk acoustic wave devices; flip-chip devices; radiofrequency oscillators; resonators; 0.25 micron; 12 mW; 2 GHz; BiCMOS oscillator; RF oscillator; SiGe; flip-chip mounted BAW resonator; Assembly; BiCMOS integrated circuits; Frequency synthesizers; GSM; Germanium silicon alloys; Oscillators; Phase noise; Radio frequency; Silicon germanium; Working environment noise;
Conference_Titel :
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0852-0
Electronic_ISBN :
0193-6530
DOI :
10.1109/ISSCC.2007.373553
