DocumentCode :
2871461
Title :
Light extraction analysis of GaN-based LEDs
Author :
Lee, Tsung-Xian ; Ma, Shih-Hsin ; Chien, Wei-Ting ; Sun, Ching-Cherng
Author_Institution :
Inst. of Opt. Sci., Nat. Central Univ., Chungli
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
Light extraction efficiency of GaN-based LEDs as functions of chip dimensions, absorption coefficients and package for both conventional one and Thin-GaN are analyzed based on Monte-Carlo ray tracing.
Keywords :
Monte Carlo methods; light emitting diodes; ray tracing; wide band gap semiconductors; GaN; Monte-Carlo ray tracing; light emitting diodes; light extraction analysis; Absorption; Energy efficiency; Gallium nitride; Light emitting diodes; Packaging; Quantum well devices; Ray tracing; Rough surfaces; Surface roughness; Surface texture; (230.3670) light-emitting diodes; (230.3990) microstructure devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628250
Filename :
4628250
Link To Document :
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