DocumentCode
2871786
Title
GaAs monolithic circuit for millimeter-wave receiver application
Author
Chu, A. ; Courtney, W. ; Mahoney, L. ; Lincoln, G. ; Macropoulos, W. ; Sudbury, R. ; Lindley, W.
Author_Institution
MIT Lincoln Laboratory, Lexington, MA, USA
Volume
XXIV
fYear
1981
fDate
18-20 Feb. 1981
Firstpage
144
Lastpage
145
Abstract
A 31GHz monolithic receiver prototype, using integrating mixer diodes and MESFETs on a GaAs substrate, will be described. The single monolithic chip exhibits a conversion gain of 4dB and a receiver noise figure of 11.5dB (SSB).
Keywords
FETs; Fabrication; Frequency; Gallium arsenide; Millimeter wave circuits; Millimeter wave radar; Millimeter wave technology; Production; Protons; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1981.1156197
Filename
1156197
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