Title :
GaAs monolithic circuit for millimeter-wave receiver application
Author :
Chu, A. ; Courtney, W. ; Mahoney, L. ; Lincoln, G. ; Macropoulos, W. ; Sudbury, R. ; Lindley, W.
Author_Institution :
MIT Lincoln Laboratory, Lexington, MA, USA
Abstract :
A 31GHz monolithic receiver prototype, using integrating mixer diodes and MESFETs on a GaAs substrate, will be described. The single monolithic chip exhibits a conversion gain of 4dB and a receiver noise figure of 11.5dB (SSB).
Keywords :
FETs; Fabrication; Frequency; Gallium arsenide; Millimeter wave circuits; Millimeter wave radar; Millimeter wave technology; Production; Protons; Schottky diodes;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156197
