Title :
Active phase shifters at X band using GaAs MESFETs
Author :
Tsironis, Christos ; Harrop, Peter ; Bostelmann, M.
Author_Institution :
Laboratories D´´Electronique et de Physique Appliquee, Limeil-Brevannes, France
Abstract :
This report will describe a X-band active phase shifter with 140° continuous phase variation and associated gain of 30dB. The circuit consists of pre-and post-amplifying FETs, connected with a dual-gate FET as a phase-shifting element. Noise figure is better than 4.9dB at 12GHz.
Keywords :
Bandwidth; Circuits; FETs; Frequency; Gallium arsenide; Impedance; MESFETs; Noise figure; Phase shifters; Phased arrays;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156200
