Title :
Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current
Author :
Stiff-Roberts, Adrienne D. ; Zhao, Zhiya ; Yi, Changhyun
Author_Institution :
Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC
Abstract :
To reduce dark current in quantum-dot infrared photodetectors, different InAs/GaAs quantum-dot doping conditions, i.e. concentration and modulation- vs. delta-doping, have been investigated by the comparison of temperature-dependent dark current and corresponding activation energies vs. bias.
Keywords :
gallium arsenide; indium compounds; photodetectors; semiconductor quantum dots; InAs-GaAs; delta doping; dopant incorporation; infrared photodetection; low dark current; quantum dots; Dark current; Doping; Epitaxial layers; Gallium arsenide; Infrared detectors; Infrared imaging; Molecular beam epitaxial growth; Optical modulation; Photodetectors; Quantum dots; (040.3060) Infrared; (040.5160) Photodetectors; (040.5570) Quantum detectors; (160.1890) Detector Materials;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628283
