Long wavelength terahertz quantum-cascade lasers with one-well injector

Author

Kumar, Sudhakar ; Williams, Benjamin S. ; Qing Hu ; Reno, John L.

Author_Institution

Dept. of Electr. Eng., Massachusetts Inst. of Technol., Cambridge, MA

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We report operation of terahertz quantum-cascade lasers at frequencies down to 1.86 THz (lambda ap 161 mum) using a single quantum-well injector that significantly reduces free-carrier losses. The laser threshold current density at 5 K was ~140 A/cm².

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; laser beams; optical losses; quantum cascade lasers; quantum well devices; submillimetre wave lasers; GaAs-Al_0.15Ga_0.85As; free-carrier losses; frequency 1.86 THz; laser threshold current density; long-wavelength terahertz lasers; quantum-cascade lasers; single quantum-well injector; temperature 5 K; wavelength 161 mum; Electrons; Laboratories; Laser theory; Pump lasers; Quantum cascade lasers; Quantum computing; Quantum well lasers; Resonance; Semiconductor lasers; Wafer bonding; (140.3070) Infrared and far-infrared lasers; (140.5960) Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628287

Filename

4628287