Title :
Highly symmetric tri-axis piezoelectric bimorph accelerometer
Author :
Zou, Qiang ; Tan, Wei ; Kim, Eun Sok ; Loeb, Gerald E.
Author_Institution :
Dept. of EE-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
This paper describes the design, fabrication and test results of a novel bimorph tri-axis piezoelectric accelerometer (built on symmetric quad Parylene beams with ZnO film). Because of its highly symmetric quad-beam bimorph structure and single proof mass, this tri-axis piezoelectric accelerometer has high sensitivity, low cross-axial sensitivity, good linearity and compact size. The un-amplified sensitivities of the X, Y and Z-axis electrodes in response to accelerations in X, Y and Z-axis are 0.93 mV/g, 1.13 mV/g and 0.88 mV/g, respectively. The minimum detectable signal is measured to be 0.04 g over a subHz ∼100 Hz bandwidth. The cross-axial sensitivity among the X, Y and Z-axis electrodes is less than 15%.
Keywords :
II-VI semiconductors; acceleration measurement; accelerometers; finite element analysis; micromechanical devices; piezoelectric devices; piezoelectric semiconductors; piezoelectric thin films; semiconductor growth; semiconductor thin films; sputter etching; zinc compounds; 100 Hz; Al-SiN-ZnO; ZnO film; bimorph tri-axis piezoelectric accelerometer; micromachining; minimum detectable signal; quadbeam bimorph structure; symmetric quad Parylene beams; triaxis electrodes; Acceleration; Accelerometers; Bandwidth; Electrodes; Fabrication; Linearity; Piezoelectric films; Signal detection; Testing; Zinc oxide;
Conference_Titel :
Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
Print_ISBN :
0-7803-8265-X
DOI :
10.1109/MEMS.2004.1290556