• DocumentCode
    2872013
  • Title

    Highly symmetric tri-axis piezoelectric bimorph accelerometer

  • Author

    Zou, Qiang ; Tan, Wei ; Kim, Eun Sok ; Loeb, Gerald E.

  • Author_Institution
    Dept. of EE-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    197
  • Lastpage
    200
  • Abstract
    This paper describes the design, fabrication and test results of a novel bimorph tri-axis piezoelectric accelerometer (built on symmetric quad Parylene beams with ZnO film). Because of its highly symmetric quad-beam bimorph structure and single proof mass, this tri-axis piezoelectric accelerometer has high sensitivity, low cross-axial sensitivity, good linearity and compact size. The un-amplified sensitivities of the X, Y and Z-axis electrodes in response to accelerations in X, Y and Z-axis are 0.93 mV/g, 1.13 mV/g and 0.88 mV/g, respectively. The minimum detectable signal is measured to be 0.04 g over a subHz ∼100 Hz bandwidth. The cross-axial sensitivity among the X, Y and Z-axis electrodes is less than 15%.
  • Keywords
    II-VI semiconductors; acceleration measurement; accelerometers; finite element analysis; micromechanical devices; piezoelectric devices; piezoelectric semiconductors; piezoelectric thin films; semiconductor growth; semiconductor thin films; sputter etching; zinc compounds; 100 Hz; Al-SiN-ZnO; ZnO film; bimorph tri-axis piezoelectric accelerometer; micromachining; minimum detectable signal; quadbeam bimorph structure; symmetric quad Parylene beams; triaxis electrodes; Acceleration; Accelerometers; Bandwidth; Electrodes; Fabrication; Linearity; Piezoelectric films; Signal detection; Testing; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
  • Print_ISBN
    0-7803-8265-X
  • Type

    conf

  • DOI
    10.1109/MEMS.2004.1290556
  • Filename
    1290556