• DocumentCode
    2872047
  • Title

    High-speed split-emitter I2L/MTL memory cell

  • Author

    Wiedmann, S. ; Tang, Dong

  • Author_Institution
    IBM Research Center, Yorktown Heights, NY, USA
  • Volume
    XXIV
  • fYear
    1981
  • fDate
    18-20 Feb. 1981
  • Firstpage
    158
  • Lastpage
    159
  • Abstract
    This paper will report on the development of a split-emitter cell to overcome the problem of small sense signals in injector-sensed I2L/MTL memories. Sense signals > 100mV at read currents ∼ 0.3mA were achieved experimentally, resulting in potentially a 2x reduction in chip access time.
  • Keywords
    Bipolar transistors; Circuit testing; Current supplies; Degradation; Electron devices; Inverters; Parasitic capacitance; Resistors; Signal design; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1981.1156211
  • Filename
    1156211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2872047