Title :
CCD memory using multilevel storage
Author :
Terman, L. ; Lee, Youngjoo ; Merrill, R. ; Heller, L. ; Pettigrew, M.
Author_Institution :
IBM Research Center, Yorktown Heights, NY, USA
Abstract :
CCD multilevel storage resulting in increased bit density and decreased sense signal, will be reported, citing design considerations for multilevel storage. Launch and sense circuits which are insensitive to geometry and parameter tolerances will be presented.
Keywords :
Charge coupled devices; Charge transfer; Filling; Geometry; Latches; Leakage current; Multilevel systems; Pulse circuits; Trigger circuits; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156214
