DocumentCode
287209
Title
Semiconductor power MOSFETs devices in series
Author
Guidini, R. ; Chatroux, D. ; Guyon, Y. ; Lafore, D.
Author_Institution
CEA, Pierrelatte, France
fYear
1993
fDate
13-16 Sep 1993
Firstpage
425
Abstract
Power semiconductors are more reliable then thyratrons. Consequently new switching systems using semiconductor devices are being studied. Power MOSFETs and IGBTs offer a simpler alternative. The advantages are the simplicity of the driving circuit and their high swithing speed. But applications of these devices are limited to maximum voltage, generally up to 1000/1500 V. However, fast power switches with voltage ratings much higher than those of single fast switching can be made by connecting these devices in series. This paper presents and discusses the value of the master/slave principle series connection. The master/slave principle is evaluated with the circuit simulator PSPICE
Keywords
SPICE; digital simulation; insulated gate field effect transistors; power transistors; semiconductor switches; PSPICE; circuit simulator; driving circuit; fast power switches; master/slave principle series connection; power MOSFETs; swithing speed; voltage ratings;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location
Brighton
Type
conf
Filename
264917
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