DocumentCode
2872094
Title
Power GaAs FET amplifiers
Author
Gewartowski, J.
Author_Institution
Bell Telephone Laboratories, Allentown, PA, USA
Volume
XXIV
fYear
1981
fDate
18-20 Feb. 1981
Firstpage
92
Lastpage
93
Abstract
The latest developments in power GaAs FET amplifiers will be assessed, with emphasis on circuit design for performance and reliability. Both hybrid and monolithic designs will be discussed.
Keywords
Broadband amplifiers; Circuit optimization; Frequency; Gallium arsenide; High power amplifiers; Microwave FETs; Microwave amplifiers; Microwave devices; Power amplifiers; Tuned circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1981.1156215
Filename
1156215
Link To Document