Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection

Author

Okyay, Ali K. ; Nayfeh, Ammar M. ; Saraswat, Krishna C. ; Marshall, Ann ; McIntyre, Paul C. ; Yonehara, Takao

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85 A/W at 1.55 mum and 2 V reverse bias, and exhibit reverse dark currents of 100 mA/cm² and external quantum efficiency up to 68%.

Keywords

dark conductivity; elemental semiconductors; epitaxial growth; germanium; infrared detectors; metal-semiconductor-metal structures; photodetectors; semiconductor epitaxial layers; semiconductor growth; silicon; Ge-Si; detector responsivity; external quantum efficiency; germanium-on-silicon MSM photodetectors; heteroepitaxial growth; reverse bias; reverse dark currents; voltage 2 V; wavelength 1.55 mum; CMOS technology; Dark current; Electrodes; Infrared spectra; Materials science and technology; Optical films; Photodetectors; Schottky diodes; Semiconductor films; Silicon; (040.3060) Infrared; (040.5160) Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628294

Filename

4628294