DocumentCode
287213
Title
Optimal design of power bipolar transistor
Author
Napieralski, A. ; Grecki, M.
Author_Institution
Inst. of Electron., Tech. Univ. of Lodz, Poland
fYear
1993
fDate
13-16 Sep 1993
Firstpage
396
Abstract
The influence of geometrical dimensions on the electrical parameters of the bipolar power transistor is presented. The dimensions of emitter and base fingers have been changed in order to obtain (for the given silicon surface area) optimal performance of the device. The simulations of the typical switching circuit with application of a 2-dimensional physical transistor model were performed. The two-dimensional semiconductor device simulator PASS has been used in the computation. The various physical effects important in the case of power devices were taken into account. The power losses during commutation were compared for various structures in order to choose the optimal one
Keywords
bipolar transistors; digital simulation; power transistors; semiconductor device models; PASS; base fingers; commutation; electrical parameters; emitter fingers; geometrical dimensions; optimal performance; physical transistor model; power bipolar transistor; switching circuit; two-dimensional semiconductor device simulator;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location
Brighton
Type
conf
Filename
264922
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