Title :
Raman gain in helium ion implanted silicon waveguides
Author :
Liu, Y. ; Tsang, H.K.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Hong Kong
Abstract :
We show experimentally that helium ion implantation in silicon can reduce the optical loss from free carriers produced by two photon absorption and allow optical gain from cw pumped stimulated Raman scattering in silicon waveguides.
Keywords :
elemental semiconductors; ion implantation; optical fabrication; optical losses; optical materials; optical pumping; optical waveguides; silicon; stimulated Raman scattering; two-photon processes; CW pumped stimulated Raman scattering; Raman gain; Si; free carriers production; helium ion implantation; optical gain; optical loss; silicon waveguides; two-photon absorption; Helium; Ion implantation; Nonlinear optics; Optical losses; Optical pumping; Optical scattering; Optical waveguides; Particle beam optics; Silicon; Stimulated emission; (230.7390) Waveguide, planar; (290.5860) Scattering, Raman; (300.1030) Absorption;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628295
