DocumentCode
2872130
Title
Raman gain in helium ion implanted silicon waveguides
Author
Liu, Y. ; Tsang, H.K.
Author_Institution
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Hong Kong
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
We show experimentally that helium ion implantation in silicon can reduce the optical loss from free carriers produced by two photon absorption and allow optical gain from cw pumped stimulated Raman scattering in silicon waveguides.
Keywords
elemental semiconductors; ion implantation; optical fabrication; optical losses; optical materials; optical pumping; optical waveguides; silicon; stimulated Raman scattering; two-photon processes; CW pumped stimulated Raman scattering; Raman gain; Si; free carriers production; helium ion implantation; optical gain; optical loss; silicon waveguides; two-photon absorption; Helium; Ion implantation; Nonlinear optics; Optical losses; Optical pumping; Optical scattering; Optical waveguides; Particle beam optics; Silicon; Stimulated emission; (230.7390) Waveguide, planar; (290.5860) Scattering, Raman; (300.1030) Absorption;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628295
Filename
4628295
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