Title :
A 3 to 5 GHz UWB SiGe HBT Low Noise Amplifier
Author :
Touati, Farid ; Loulou, Mourad ; Bouzid, Mohammad
Author_Institution :
Dept. of Electr. & Comput. Eng., Sultan Qaboos Univ., Muscat
Abstract :
Ultra-wideband low-noise amplifiers (UWB LNA) operating in the low-frequency band (3.1-5 GHz) of UWB spectrum are presented. The designs consist of a cascode amplifier with wideband input matching techniques based on LC-ladder filters or shunt-feedback both combined with inductive peaking. Implemented with a SiGe HBT process, the LNAs give 18.0 dB gain, better than -20 dB input matching, and a return loss less than -34 dB, while consuming 11 mW under 1.5 V supply. The feedback LNA gives a better flat noise figure of 2.5 dB and an input IP3 of -6 dB at 5 GHz.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; feedback amplifiers; heterojunction bipolar transistors; low noise amplifiers; ultra wideband technology; wideband amplifiers; BiCMOS amplifiers; LC-ladder filters; SiGe; UWB HBT low-noise amplifiers; cascode amplifier; frequency 3 GHz to 5 GHz; gain 18 dB; inductive peaking; noise figure 2.5 dB; power 11 mW; shunt feedback; ultra-wideband low-noise amplifiers; voltage 1.5 V; wideband input matching; Broadband amplifiers; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Low-frequency noise; Low-noise amplifiers; Matched filters; Silicon germanium; Ultra wideband technology; LNA; UWB; shunt-feedback Introduction; wideband matching;
Conference_Titel :
Microelectronics, 2006. ICM '06. International Conference on
Conference_Location :
Dhahran
Print_ISBN :
1-4244-0764-8
Electronic_ISBN :
1-4244-0765-6
DOI :
10.1109/ICM.2006.373639
