Title :
Polarization field engineering with Type-II InGaN-GaNAs quantum well for improved nitride gain media at 420–550 nm
Author :
Arif, Ronald A. ; Ee, Yik-Khoon ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
Novel type-II InGaN-GaNAs quantum well is presented and analyzed as improved gain media for efficient light emitting diodes and laser diodes emitting at 420-nm up to 550-nm, with a large electronhole wavefunction overlap (Gammae_hh >65-70%).
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; light polarisation; quantum well lasers; wide band gap semiconductors; InGaN-GaNAs; electronhole wavefunction overlap; laser diodes; light emitting diodes; polarization field engineering; quantum well; wavelength 420 nm to 550 nm; Diode lasers; Gallium nitride; Lead; Light emitting diodes; Optical materials; Optical polarization; Piezoelectric polarization; Quantum computing; Quantum well lasers; Stationary state; (140.2020) Diode Lasers; (140.5960) Semiconductor Lasers; (230.0250) Optoelectronics;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628309
