Title :
First demonstration of tensile strained GaInNAs/InP multi-quantum-well TM laser emitting at 1.55 μm
Author :
Dagens, B. ; Alexandre, F. ; Martin, F. ; Accard, A. ; Drisse, O. ; Derouin, E. ; Brenot, R. ; Make, D. ; Pommereau, F. ; Poingt, F. ; Le Gouezigou, O. ; Gentner, J.L.
Author_Institution :
Alcatel Thales III-VLab, Palaiseau
Abstract :
A new tensile strained material system, GaInNAs/InP, has been developed in order to achieve TM lasing around 1.55 mum, for further isolator integration. First static and dynamic evaluation of such GaInNAs/InP multi-quantum-well lasers is reported.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser beams; optical isolators; optical materials; quantum well lasers; wide band gap semiconductors; DFB laser; GaInNAs-InP; dynamic evaluation; isolator integration; multiquantum-well TM laser; static evaluation; tensile strained material system; wavelength 1.55 mum; Distributed feedback devices; Epitaxial growth; Fabry-Perot; III-V semiconductor materials; Indium phosphide; Isolators; Laser feedback; Laser modes; Optical feedback; Quantum well lasers; (060.2330) Fiber optics communications; (130.0250) Optoelectronics; (140.2020) Diode lasers;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628311
