DocumentCode :
2872439
Title :
Design of a GaN/AlGaN intersubband Raman laser electrically tunable over the 3∼5 μm atmospheric transmission window
Author :
Sun, Greg ; Khurgin, Jacob B. ; Soref, Richard A.
Author_Institution :
Dept. of Phys., Univ. of Massachusetts at Boston, Boston, MA
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
Design and simulation are presented for a high-temperature intersubband Raman laser based on GaN/AlGaN coupled quantum wells. This laser is tunable over 3.6~5.2 mum by applying an electric field at a fixed pumping wavelength of 2.7 mum.
Keywords :
III-V semiconductors; Raman lasers; aluminium compounds; electro-optical devices; gallium compounds; laser tuning; optical materials; quantum well lasers; wide band gap semiconductors; GaN-AlGaN; atmospheric transmission window; electric field; high-temperature intersubband Raman laser design; pumping wavelength; quantum wells; tunable laser; wavelength 2.7 mum; wavelength 3.6 mum to 5.2 mum; Aluminum gallium nitride; Atmospheric modeling; Atmospheric waves; Gallium nitride; Laser excitation; Optical coupling; Optical design; Pump lasers; Quantum well lasers; Tunable circuits and devices; (140.3600) Tunable lasers; (140.5960) Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628315
Filename :
4628315
Link To Document :
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