Design of a GaN/AlGaN intersubband Raman laser electrically tunable over the 3∼5 μm atmospheric transmission window

Author

Sun, Greg ; Khurgin, Jacob B. ; Soref, Richard A.

Author_Institution

Dept. of Phys., Univ. of Massachusetts at Boston, Boston, MA

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Design and simulation are presented for a high-temperature intersubband Raman laser based on GaN/AlGaN coupled quantum wells. This laser is tunable over 3.6~5.2 mum by applying an electric field at a fixed pumping wavelength of 2.7 mum.

Keywords

III-V semiconductors; Raman lasers; aluminium compounds; electro-optical devices; gallium compounds; laser tuning; optical materials; quantum well lasers; wide band gap semiconductors; GaN-AlGaN; atmospheric transmission window; electric field; high-temperature intersubband Raman laser design; pumping wavelength; quantum wells; tunable laser; wavelength 2.7 mum; wavelength 3.6 mum to 5.2 mum; Aluminum gallium nitride; Atmospheric modeling; Atmospheric waves; Gallium nitride; Laser excitation; Optical coupling; Optical design; Pump lasers; Quantum well lasers; Tunable circuits and devices; (140.3600) Tunable lasers; (140.5960) Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628315

Filename

4628315