Title :
Process simulation in two dimensions
Author_Institution :
Bell Laboratories, Murray Hill, NJ, USA
Abstract :
Numerical simulation of the redistribution of impurities near a mask edge under general processing conditions will be described. The simulation by itself and in conjunction with two-dimensional device analysis programs has been found to be a useful tool in understanding the lateral effects in small geometry VLSI devices.
Keywords :
Difference equations; Doping profiles; Impurities; Integrated circuit modeling; Nonlinear equations; Oxidation; Publishing; Semiconductor process modeling; Silicon; Very large scale integration;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156234
