Title :
Controlling secondary breakdown of bipolar power transistors
Author_Institution :
Consultant, Jalisco, Mexico
Abstract :
An active ballasting technique used to fabricate an oxide passivated power transistor with fTof 50MHz and capable of continuously dissipating 250W with collector voltages above 200V will be reported. Saturation voltage at 10A is under 1V.
Keywords :
Electric breakdown; Electronic ballasts; FETs; Power transistors; Resistors; Solid state circuits; Stress; Temperature; Thermal resistance; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156251
