• DocumentCode
    2872737
  • Title

    Controlling secondary breakdown of bipolar power transistors

  • Author

    Widlar, R.

  • Author_Institution
    Consultant, Jalisco, Mexico
  • Volume
    XXIV
  • fYear
    1981
  • fDate
    18-20 Feb. 1981
  • Firstpage
    44
  • Lastpage
    45
  • Abstract
    An active ballasting technique used to fabricate an oxide passivated power transistor with fTof 50MHz and capable of continuously dissipating 250W with collector voltages above 200V will be reported. Saturation voltage at 10A is under 1V.
  • Keywords
    Electric breakdown; Electronic ballasts; FETs; Power transistors; Resistors; Solid state circuits; Stress; Temperature; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1981.1156251
  • Filename
    1156251
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2872737