Title :
A dual-gate floating-gate FET device
Author :
Kotecha, H. ; Chung Lam
Author_Institution :
IBM General Technology Division, Essex Junction, VT, USA
Abstract :
An experimental floating-gate FET with two capacitively-coupled control gates for nonvolatile and electrically alterable application will be discussed. An enhanced conduction insulator under one control gate serves to charge/discharge the floating gate.
Keywords :
Dielectric substrates; FETs; Insulation; Physics; Power system reliability; Solid state circuits; Switched capacitor networks; Threshold voltage; Tunneling; Voltage control;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156253
