DocumentCode :
2872785
Title :
Temperature-dependent saturation fluence in InGaAs quantum dots based on direct absorption measurements
Author :
Choc, K.E. ; Brilliant, N.A. ; Cundiff, S.T. ; Silverman, K.L. ; Mirin, R.P.
Author_Institution :
JILA/NIST, Univ. of Colorado, Boulder, CO
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
Direct measurement of the absorption of an ensemble of InGaAs quantum dots using a heterodyne multibounce technique reveals that the saturation fluence decreases dramatically with decreasing temperature. The dependence is attributed to homogeneous linewidth narrowing.
Keywords :
III-V semiconductors; absorption coefficients; gallium arsenide; indium compounds; optical saturable absorption; semiconductor quantum dots; InGaAs; absorption coefficient; direct absorption measurement; heterodyne multibounce technique; homogeneous linewidth narrowing; semiconductor quantum dots; temperature-dependent saturation; Absorption; Face detection; Indium gallium arsenide; NIST; Nonlinear optics; Optical waveguides; Pulse measurements; Quantum dot lasers; Quantum dots; Temperature; (190.0190) Nonlinear optics; (190.5970) Semiconductor nonlinear optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628334
Filename :
4628334
Link To Document :
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