DocumentCode
287284
Title
Transient thermal effects during turn off in GTO devices
Author
Mawby, P.A. ; Towers, M.S. ; Evans, M. ; Hu, Z. ; Board, K.
Author_Institution
Univ. Coll. of Swansea, UK
fYear
1993
fDate
13-16 Sep 1993
Firstpage
137
Abstract
A rigorous two-dimensional physical model of the GTO thyristor is presented. The model includes the fully coupled effects of self heating of the device during the turn-off phase of operation. The effects of spatially dependent minority carrier lifetime, Auger recombination and carrier-carrier scattering are included in the model. The simulation can be carried out within a realistic external circuit environment
Keywords
carrier lifetime; electron-hole recombination; electronic engineering computing; minority carriers; semiconductor device models; thyristors; transients; 2D device simulation package; Auger recombination; GTO devices; GTO thyristor; SUDS; carrier-carrier scattering; external circuit environment; self heating; spatially dependent minority carrier lifetime; transient thermal effects; turn off; two-dimensional physical model;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location
Brighton
Type
conf
Filename
264996
Link To Document