DocumentCode :
2872866
Title :
Trend for future silicon technology
Author :
Ohmi, Tadahiro
Author_Institution :
Tohoku University
fYear :
1994
fDate :
1994
Keywords :
Argon; Copper; Epitaxial growth; Large scale integration; MOSFETs; Neurons; Oxidation; Silicon; Threshold voltage; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771098
Filename :
771098
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2872866