DocumentCode
287289
Title
Analysis of second breakdown limits in RBSOA of bipolar transistors
Author
Fratelli, L. ; Busatto, G. ; Spirito, P. ; Vitale, G.F.
Author_Institution
Dept. of Electron. Eng., Naples Univ., Italy
fYear
1993
fDate
13-16 Sep 1993
Firstpage
101
Abstract
Performances of different power bipolar transistors during an inductive turn-off transient are experimentally compared, by means of a non-destructive tester, and analysed with the aid of a two-dimensional numerical simulator. Sustaining voltage dependences upon collector current and base drive are found, which can explain its transient evolution. Finally, the influence on device behaviour of base drive and cell geometry is shown, and interpreted in terms of power density distribution
Keywords
bipolar transistors; electric breakdown of solids; nondestructive testing; power transistors; semiconductor device testing; semiconductor switches; transients; BJT; RBSOA; base drive; bipolar transistors; cell geometry; collector current; inductive turn-off transient; nondestructive tester; power density distribution; power switches; reverse bias safe operating area; second breakdown limits; sustaining voltage; two-dimensional numerical simulator;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location
Brighton
Type
conf
Filename
265001
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