• DocumentCode
    2872903
  • Title

    Recent developments in N2O- and NO-based oxynitride dielectrics for cmos ulsi applications

  • Author

    Bhat, M. ; Han, L.K. ; Yoon, G.W. ; Yan, J. ; Kwong, D.L.

  • Author_Institution
    The University of Texas at Austin
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    36892
  • Lastpage
    37987
  • Keywords
    Application software; Boron; Chemicals; Design for quality; Dielectrics; Hot carriers; Kinetic theory; Oxidation; Silicon; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771100
  • Filename
    771100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2872903